Thermoelectric materials based on single crystal A

专利名称：Thermoelectric materials based on single

crystal AlInN—GaN grown by metalorganicvapor phase epitaxy

发明人：Nelson Tansu,Hua Tong,Jing Zhang,Guangyu

Liu,Gensheng Huang

申请号：US12963136申请日：20101208公开号：US09525117B2公开日：20161220

专利附图：

摘要：The invention is a thermoelectric device fabricated by growing a single crystal

AlInN semiconductor material on a substrate, and a method of fabricating same. In apreferred embodiment, the semiconductor material is AlInN grown on and lattice-matched to a GaN template on a sapphire substrate, and the growth is performed usingmetalorganic vapor phase epitaxy (MOVPE).

申请人：Nelson Tansu,Hua Tong,Jing Zhang,Guangyu Liu,Gensheng Huang

地址：Bethlehem PA US,Allentown PA US,Bethlehem PA US,Bethlehem PAUS,Bethlehem PA US

国籍：US,US,US,US,US

代理机构：Saul Ewing LLP

更多信息请下载全文后查看