THERMOELECTRIC MATERIALS BASED ON SINGLE CRYSTAL A

专利名称：THERMOELECTRIC MATERIALS BASED ON

SINGLE CRYSTAL AlInN-GaN GROWN BYMETALORGANIC VAPOR PHASE EPITAXY

发明人：Nelson Tansu,Hua Tong,Jing Zhang,Guangyu

Liu,Gensheng Huang

申请号：US12963136申请日：20101208

公开号：US20110240082A1公开日：20111006

专利附图：

摘要：The invention is a thermoelectric device fabricated by growing a single crystal

AlInN semiconductor material on a substrate, and a method of fabricating same. In apreferred embodiment, the semiconductor material is AlInN grown on and lattice-matched to a GaN template on a sapphire substrate, and the growth is performed usingmetalorganic vapor phase epitaxy (MOVPE).

申请人：Nelson Tansu,Hua Tong,Jing Zhang,Guangyu Liu,Gensheng Huang

地址：Bethlehem PA US,Allentown PA US,Bethlehem PA US,Bethlehem PAUS,Bethlehem PA US

国籍：US,US,US,US,US

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